半导体材料

維基媒體列表條目

半导体材料是一类固体材料,其导电性介于导体绝缘体之间,属于半导体

发展

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  • 1833年,英国的法拉第发现硫化银是半导体材料,因为它的电阻随著温度上升而降低。
  • 1874年,德国的布劳恩注意到硫化物的电导率与所加电压的方向有关,这就是半导体的整流作用。
  • 1947年12月23日,巴丁布拉坦进一步使用点接触电晶体制作出一个语音放大器,电晶体正式发明。
  • 1958年9月12日,美国的基尔比,细心地切了一块作为电阻,再用一块pn接面做为电容,制造出一个震荡器电路。

分类

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以原料分为:

列表

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半导体材料列表
元素 化学式 能隙 (eV) 直接带隙和间接带隙
IV 1 Si 1.12[1][2] 间接带隙
IV 1 Germanium Ge 0.67[1][2] 间接带隙
IV 1 Material properties of diamond英语Material properties of diamond C 5.47[1][2] 间接带隙
IV 1 , α-Sn Sn 0[3][4] 半金属 (能带理论)
IV 2 碳化硅, 3C-SiC SiC 2.3[1] 间接带隙
IV 2 碳化硅, 4H-SiC SiC 3.3[1] 间接带隙
IV 2 碳化硅, 6H-SiC英语6H-SiC SiC 3.0[1] 间接带隙
VI 1 , 硫的同素异形体 S8 2.6[5]
VI 1 Se 1.83 - 2.0[6] 间接带隙
VI 1 Se 2.05 间接带隙
VI 1 Te 0.33[7]
III-V 2 氮化硼, cubic BN 6.36[8] 间接带隙
III-V 2 氮化硼, hexagonal BN 5.96[8] quasi-direct
III-V 2 氮化硼 BN 5.5[9]
III-V 2 磷化硼 BP 2.1[10] 间接带隙
III-V 2 砷化硼 BAs 1.82 直接带隙
III-V 2 砷化硼 B12As2 3.47 间接带隙
III-V 2 氮化铝 AlN 6.28[1] 直接带隙
III-V 2 磷化铝 AlP 2.45[2] 间接带隙
III-V 2 砷化铝 AlAs 2.16[2] 间接带隙
III-V 2 锑化铝 AlSb 1.6/2.2[2] 直接带隙/direct
III-V 2 氮化镓 GaN 3.44[1][2] 直接带隙
III-V 2 磷化镓 GaP 2.26[1][2] 间接带隙
III-V 2 Gallium arsenide英语Gallium arsenide GaAs 1.42[1][2] 直接带隙
III-V 2 锑化镓 GaSb 0.73[1][2] 直接带隙
III-V 2 氮化铟 InN 0.7[1] 直接带隙
III-V 2 磷化铟 InP 1.35[1] 直接带隙
III-V 2 砷化铟 InAs 0.36[1] 直接带隙
III-V 2 锑化铟 InSb 0.17[1] 直接带隙
II-VI 2 硒化镉 CdSe 1.74[2] 直接带隙
II-VI 2 硫化镉 CdS 2.42[2] 直接带隙
II-VI 2 碲化镉 CdTe 1.49[2] 直接带隙
II-VI 2 氧化锌 ZnO 3.37[2] 直接带隙
II-VI 2 硒化锌 ZnSe 2.7[2] 直接带隙
II-VI 2 硫化锌 ZnS 3.54/3.91[2] 直接带隙
II-VI 2 碲化锌 ZnTe 2.3[2] 直接带隙
I-VII 2 氯化亚铜 CuCl 3.4[11] 直接带隙
I-VI 2 Copper sulfide英语Copper sulfide Cu2S 1.2[10] 间接带隙
IV-VI 2 硒化铅 PbSe 0.26[7] 直接带隙
IV-VI 2 硫化铅 PbS 0.37[12]
IV-VI 2 碲化铅 PbTe 0.32[1]
IV-VI 2 硫化亚锡 SnS 1.3/1.0[13] 直接带隙/间接带隙
IV-VI 2 二硫化锡 SnS2 2.2[14]
IV-VI 2 碲化亚锡 SnTe 0.18
IV-VI 3 Lead tin telluride英语Lead tin telluride Pb1−xSnxTe 0-0.29
V-VI 2 碲化铋 Bi2Te3 0.13[1]
II-V 2 磷化镉 Cd3P2 0.5[15]
II-V 2 砷化镉 Cd3As2 0
II-V 2 磷化锌 Zn3P2 1.5[16] 直接带隙
II-V 2 二磷化锌 ZnP2 2.1[17]
II-V 2 砷化锌 Zn3As2 1.0[18]
II-V 2 锑化锌 Zn3Sb2
2 二氧化钛, 锐钛矿 TiO2 3.20[19] 间接带隙
2 二氧化钛, 金红石 TiO2 3.0[19] 直接带隙
2 二氧化钛, 板钛矿 TiO2 3.26[19]
2 氧化亚铜 Cu2O 2.17[20]
2 氧化铜 CuO 1.2
2 二氧化铀 UO2 1.3
2 二氧化锡 SnO2 3.7
3 钛酸钡 BaTiO3 3
3 钛酸锶 SrTiO3 3.3
3 铌酸锂 LiNbO3 4
V-VI 2 monoclinic 二氧化钒 VO2 0.7[21] 光学带隙
2 碘化铅 PbI2 2.4[22]
2 二硫化钼 MoS2 1.23 eV (2H)[23] 间接带隙
2 Gallium(II) selenide英语Gallium(II) selenide GaSe 2.1 间接带隙
2 硒化铟 InSe 1.26-2.35 eV[24] 直接带隙 (2D间接带隙)
2 硫化亚锡 SnS >1.5 eV 直接带隙
2 硫化铋 Bi2S3 1.3[1]
Magnetic, diluted (DMS)[25] 3 Gallium manganese arsenide英语Gallium manganese arsenide GaMnAs
Magnetic, diluted (DMS) 3 Lead manganese telluride PbMnTe
4 Lanthanum calcium manganate La0.7Ca0.3MnO3
2 氧化亚铁 FeO 2.2 [26]
2 一氧化镍 NiO 3.6–4.0 直接带隙[27][28]
2 Europium(II) oxide英语Europium(II) oxide EuO
2 硫化亚铕 EuS
2 溴化铬 CrBr3
其它 3 Copper indium selenide英语Copper indium selenide, CIS CuInSe2 1 直接带隙
其它 3 Silver gallium sulfide AgGaS2
其它 3 Zinc silicon phosphide ZnSiP2 2.0[10]
其它 2 三硫化二砷 雌黄 As2S3 2.7[29] 直接带隙
其它 2 硫化砷 雄黄 As4S4
其它 2 Platinum silicide英语Platinum silicide PtSi
其它 2 碘化铋 BiI3
其它 2 碘化汞 HgI2
其它 2 溴化亚铊 TlBr 2.68[30]
其它 2 硫化银 Ag2S 0.9[31]
其它 2 Iron disulfide英语Iron disulfide FeS2 0.95[32]
其它 4 Copper zinc tin sulfide英语Copper zinc tin sulfide, CZTS Cu2ZnSnS4 1.49 直接带隙
其它 4 Copper zinc antimony sulfide英语Copper zinc antimony sulfide, CZAS Cu1.18Zn0.40Sb1.90S7.2 2.2[33] 直接带隙
其它 3 Copper tin sulfide, CTS Cu2SnS3 0.91[10] 直接带隙

合金表

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半导体材料合金列表
元素 材料 化学式 能隙 (eV) 直接带隙和间接带隙
IV-VI 3 Lead tin telluride英语Lead tin telluride Pb1−xSnxTe 0 0.29
IV 2 矽锗 Si1−xGex 0.67 1.11[1] 直接带隙/间接带隙
IV 2 Silicon-tin英语Silicon-tin Si1−xSnx 1.0 1.11 间接带隙
III-V 3 Aluminium gallium arsenide英语Aluminium gallium arsenide AlxGa1−xAs 1.42 2.16[1] 直接带隙/间接带隙
III-V 3 Indium gallium arsenide英语Indium gallium arsenide InxGa1−xAs 0.36 1.43 直接带隙
III-V 3 磷化铟镓 InxGa1−xP 1.35 2.26 直接带隙/间接带隙
III-V 3 Aluminium indium arsenide英语Aluminium indium arsenide AlxIn1−xAs 0.36 2.16 直接带隙/间接带隙
III-V 3 Aluminium gallium antimonide英语Aluminium gallium antimonide AlxGa1−xSb 0.7 1.61 直接带隙/间接带隙
III-V 3 Aluminium indium antimonide英语Aluminium indium antimonide AlxIn1−xSb 0.17 1.61 直接带隙/间接带隙
III-V 3 Gallium arsenide nitride GaAsN
III-V 3 Gallium arsenide phosphide英语Gallium arsenide phosphide GaAsP 1.43 2.26 直接带隙/间接带隙
III-V 3 Aluminium arsenide antimonide英语Aluminium arsenide antimonide AlAsSb 1.61 2.16 间接带隙
III-V 3 Gallium arsenide antimonide英语Gallium arsenide antimonide GaAsSb 0.7 1.42[1] 直接带隙
III-V 3 Aluminium gallium nitride英语Aluminium gallium nitride AlGaN 3.44 6.28 直接带隙
III-V 3 Aluminium gallium phosphide英语Aluminium gallium phosphide AlGaP 2.26 2.45 间接带隙
III-V 3 Indium gallium nitride英语Indium gallium nitride InGaN 2 3.4 直接带隙
III-V 3 Indium arsenide antimonide英语Indium arsenide antimonide InAsSb 0.17 0.36 直接带隙
III-V 3 Indium gallium antimonide英语Indium gallium antimonide InGaSb 0.17 0.7 直接带隙
III-V 4 Aluminium gallium indium phosphide英语Aluminium gallium indium phosphide AlGaInP 直接带隙/间接带隙
III-V 4 Aluminium gallium arsenide phosphide AlGaAsP
III-V 4 Indium gallium arsenide phosphide英语Indium gallium arsenide phosphide InGaAsP
III-V 4 Indium gallium arsenide antimonide英语Indium gallium arsenide antimonide InGaAsSb
III-V 4 Indium arsenide antimonide phosphide英语Indium arsenide antimonide phosphide InAsSbP
III-V 4 Aluminium indium arsenide phosphide AlInAsP
III-V 4 Aluminium gallium arsenide nitride AlGaAsN
III-V 4 Indium gallium arsenide nitride InGaAsN
III-V 4 Indium aluminium arsenide nitride InAlAsN
III-V 4 Gallium arsenide antimonide nitride GaAsSbN
III-V 5 Gallium indium nitride arsenide antimonide GaInNAsSb
III-V 5 Gallium indium arsenide antimonide phosphide英语Gallium indium arsenide antimonide phosphide GaInAsSbP
II-VI 3 碲化锌镉, CZT CdZnTe 1.4 2.2 直接带隙
II-VI 3 Mercury cadmium telluride英语Mercury cadmium telluride HgCdTe 0 1.5
II-VI 3 Mercury zinc telluride英语Mercury zinc telluride HgZnTe 0 2.25
II-VI 3 Mercury zinc selenide HgZnSe
II-V 4 Zinc cadmium phosphide arsenide英语Zinc cadmium phosphide arsenide (Zn1−xCdx)3(P1−yAsy)2[34] 0[35] 1.5[36]
其它 4 Copper indium gallium selenide英语Copper indium gallium selenide, CIGS Cu(In,Ga)Se2 1 1.7 直接带隙

参见

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参考文献

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